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Publications by Yong-En Syu
Suppress Temperature Instability of InGaZnO Thin Film Transistors by N2O Plasma Treatment, Including Thermal-Induced Hole Trapping Phenomenon Under Gate Bias Stress
Applied Physics Letters
Astronomy
Physics
Related publications
Positive Gate Bias Stress Instability of Carbon Nanotube Thin Film Transistors
Applied Physics Letters
Astronomy
Physics
Operational Stability of Solution Based Zinc Tin Oxide/SiO2 Thin Film Transistors Under Gate Bias Stress
APL Materials
Materials Science
Engineering
Positive Charge Trapping Phenomenon in N-Channel Thin-Film Transistors With Amorphous Alumina Gate Insulators
Journal of Applied Physics
Astronomy
Physics
Instability of Threshold Voltage Under DC Drain Bias Stress in Pentacene-Based Organic Thin Film Transistors
Turn-Around Phenomenon in the Degradation Trend of N-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stress
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Combined Negative Bias Temperature Instability and Hot Carrier Stress Effects in Low Temperature Poly-Si Thin Film Transistors
Bias Stress Effects in Organic Thin Film Transistors
Instability of Amorphous-Indium Gallium Zinc Oxide (A-Igzo) Thin Film Transistors Under DC and AC Bias Stress
AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics