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Publications by Yuanjie Lv
Influence of the Ratio of Gate Length to Drain-To-Source Distance on the Electron Mobility in AlGaN/AlN/GaN Heterostructure Field-Effect Transistors
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Related publications
Effect of Image Charges in the Drain Delay of AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Mobility Limitations Due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure
Journal of Nanomaterials
Materials Science
Nanotechnology
Nanoscience
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
Simulation Study on Electrical Characteristic of AlGaN/GaN High Electron Mobility Transistors With AlN Spacer Layer
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
