Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Yukari Ishikawa
Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography
Materia Japan
Related publications
Mapping of Process Induced Dopant Redistributions by Electron Holography
Microscopy and Microanalysis
Instrumentation
Issues Affecting Quantitative Evaluation of Dopant Profiles Using Electron Holography
Microscopy and Microanalysis
Instrumentation
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
Low Voltage Electron Holography - High Voltage Electron Holography
Microscopy and Microanalysis
Instrumentation
Electric Potential Distributions of Two-Dimensional Electron Gas Layers at GaN/AlGaN Nano-Interfaces Observed by High Precision Phase-Shifting Electron Holography
Materia Japan
Problems Concerning Application of Electron-Holography Observation of P-N Junctions From the Viewpoint of the Semiconductor Industry
Microscopy and Microanalysis
Instrumentation
Direct Observation of Dopant Atom Diffusion in a Bulk Semiconductor Crystal Enhanced by a Large Size Mismatch
Physical Review Letters
Astronomy
Physics
Observation of in Concentration Variations in InGaN∕GaN Quantum-Well Heterostructures by Scanning Capacitance Microscopy
Applied Physics Letters
Astronomy
Physics
Counting Tm Dopant Atoms in and Around GaN Dots Using Scannning Transmission Electron Microscopy
Microscopy and Microanalysis
Instrumentation
