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Publications by Zhenjie Ni
Random Access Memory: Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem (Adv. Mater. 34/2017)
Advanced Materials
Mechanics of Materials
Materials Science
Nanotechnology
Mechanical Engineering
Nanoscience
Related publications
Molecular Random-Access Memory Cell Demonstrated
MRS Bulletin
Materials Science
Theoretical Chemistry
Condensed Matter Physics
Physical
Optimization of the Phase Change Random Access Memory Employing Phase Change Materials
A Thought-Operated Digital Random-Access Memory
Computational Intelligence and Neuroscience
Medicine
Mathematics
Computer Science
Neuroscience
Comprehensive Examination on Resistive Random Access Memory
International Journal of Recent Technology and Engineering
Engineering
Management of Technology
Innovation
A 64K Dynamic Random Access Memory Feasibility Study.
Significance of Residual Artifacts From Random Access Memory
International Journal of Science and Research (IJSR)
All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Benchmarking Analogue Performance of Emerging Random Access Memory Technologies
The Observation of “Conduction Spot” on NiO Resistance Random Access Memory
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
