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Publications by Zia Karim

GaAs on Si Epitaxy by Aspect Ratio Trapping: Analysis and Reduction of Defects Propagating Along the Trench Direction

Journal of Applied Physics
AstronomyPhysics
2015English

Related publications

Epitaxial Growth of GaSb and InAs Fins on 300 Mm Si (001) by Aspect Ratio Trapping

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Optical Characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by Molecular‐beam Epitaxy

Journal of Applied Physics
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1991English

Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

Applied Physics Letters
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1991English

InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy

Nanotechnology
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INTERFACIAL DEFECTS IN GaAs/Si AFTER ANNEALING

Le Journal de Physique Colloques
1990English

Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

1992English

Effect of Graded-Temperature Arsenic Prelayer on Quality of GaAs on Ge/Si Substrates by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.

SHINKU
1985English

Effects of Surface States and Si-Interlayer Based Surface Passivation on GaAs Quantum Wires Grown by Selective Molecular Beam Epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2005English

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