Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
doi 10.1116/1.1585077
Full Text
Open PDFAbstract
Available in full text
Date
January 1, 2003
Authors
Publisher
American Vacuum Society