Ultrafast Trapping Times in Ion Implanted InP

Journal of Applied Physics - United States
doi 10.1063/1.1493651
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Fully Ion-Implanted InP JFET With Buried P-Layer

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
1990English

Silver Migration and Trapping in Ion Implanted ZnO Single Crystals

Journal of Applied Physics
AstronomyPhysics
2016English

High Temperature Rapid Thermal Annealing of Phosphorous Ion Implanted InAs∕InP Quantum Dots

Applied Physics Letters
AstronomyPhysics
2007English

Emission Channeling Studies of Implanted 167mEr in InP

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy PhysicsInstrumentationNuclear
2001English

Ultrafast Gain Dynamics in InP Quantum-Dot Optical Amplifiers

Applied Physics Letters
AstronomyPhysics
2010English

Ultrafast Carrier Trapping in Thick-Shell Colloidal Quantum Dots

Journal of Physical Chemistry Letters
Materials ScienceNanotechnologyPhysicalTheoretical ChemistryNanoscience
2017English

Pb Compatibility in Ion Implanted Zircon

Microscopy and Microanalysis
Instrumentation
2003English

Combined Optical Trapping and Microphotoluminescence of Single InP Nanowires

Applied Physics Letters
AstronomyPhysics
2009English

Photosensitivity and Noise of Ultrafast InGaAs/InP Avalanche Photodiodes

Lithuanian Journal of Physics
AstronomyPhysics
2006English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy