The Dependences of Electroluminescent Characteristics of ZnS:Mn Thin Films Upon Their Device Parameters

Journal of Applied Physics - United States
doi 10.1063/1.328642
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

CRYSTALLINE STRUCTURE AND DOPING LEVEL OF THIN ELECTROLUMINESCENT ZnS:Mn LAYERS

Le Journal de Physique Colloques
1984English

Transferred Charge Analysis of Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices

Journal of Applied Physics
AstronomyPhysics
1997English

Scanning Tunneling Spectroscopy and Luminescent Properties of ZnS:Mn,Cu,Cl Thin Films

Acta Physica Polonica A
AstronomyPhysics
2003English

Characteristics of a Photonic Bandgap Single Defect Microcavity Electroluminescent Device

IEEE Journal of Quantum Electronics
Electronic EngineeringCondensed Matter PhysicsMolecular Physics,ElectricalAtomicOptics
2001English

Optimization of Optical Properties of ZnS:Mn Thin Films Deposited by Co-Evaporation Electron Beam

Asian Journal of Scientific Research
Multidisciplinary
2019English

Microstructural Characteristics of CuGaTe2polycrystalline Thin Films

Acta Crystallographica Section A Foundations of Crystallography
1993English

Thin Film Electroluminescent Devices.

SHINKU
1987English

Characteristics of ZnXCo3-XO4 Spinel Thin Films

2016English

Figure 5: Reflectance Characteristics of Thin Films.

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy