Amanote Research
Register
Sign In
Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate
doi 10.1021/jacs.9b05705.s001
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Unknown
Publisher
American Chemical Society (ACS)
Related search
Suppression of Graphene Nucleation by Turning Off Hydrogen Supply Just Before Atmospheric Pressure Chemical Vapor Deposition Growth
Coatings
Surfaces
Films
Coatings
Materials Chemistry
Interfaces
Synthesis of Graphene by Magnetron-Plasma-Enhanced Chemical Vapor Deposition on Different Substrate Materials
Journal of the Vacuum Society of Japan
Surfaces
Instrumentation
Interfaces
Spectroscopy
Materials Science
Space Filling by Nucleation and Growth in Chemical Vapor Deposition of Diamond
Journal of Materials Research
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Chemical Vapor Deposition of Partially Oxidized Graphene
RSC Advances
Chemistry
Chemical Engineering
Low Temperature Platinum Chemical Vapor Deposition on Functionalized Self-Assembled Monolayers
Low Temperature Platinum Chemical Vapor Deposition on Functionalized Self-Assembled Monolayers
Understanding the Reaction Kinetics to Optimize Graphene Growth on Cu by Chemical Vapor Deposition
Annalen der Physik
Astronomy
Physics
Improvement of Electrical Device Performances for Graphene Directly Grown on a SiO2 Substrate by Plasma Chemical Vapor Deposition
Plasma and Fusion Research
Condensed Matter Physics
Formation Mechanism of Overlapping Grain Boundaries in Graphene Chemical Vapor Deposition Growth
Chemical Science
Chemistry