Surface Roughening During Low Temperature Si(100) Epitaxy

Journal of Applied Physics- United States

doi 10.1063/1.365883

Full Text

Abstract

Available in

Categories

Date

August 1, 1997

Authors

D. J. Eaglesham

Publisher

AIP Publishing

Related search

Epitaxy of Diamond on Si(100) and Surface-Roughening-Induced Crystal Misorientation

Physical Review B

English

Dimer and String Formation During Low Temperature Silicon Deposition on Si(100)

Physical Review Letters

English

Surface Roughening of Ge(001) During 200 eV Xe Ion Bombardment and Ge Molecular Beam Epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Condensed Matter Physics

English

Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects

Journal of Applied Physics

English

Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

Applied Physics Letters

English

Chlorine Etching for In-Situ Low-Temperature Silicon Surface Cleaning for Epitaxy Applications

English

Surface Bifurcation and Surface Roughening of Inhomogeneous Material During Plastic Deformation.

Transactions of the Japan Society of Mechanical Engineers Series A

English

Observation of a (2×8) Surface Reconstruction on Si1−xGex Alloys Grown on (100) Si by Molecular-Beam Epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Grafting Cavitands on the Si(100) Surface

English