Effects of Annealing With CO and CO2 Molecules on Oxygen Vacancy Defect Density in Amorphous SiO2 Formed by Thermal Oxidation of SiC

Journal of Applied Physics - United States
doi 10.1063/1.5041794
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Calculation of Growth Stress in SiO2 Scales Formed by Oxidation of SiC Fibers (PREPRINT)

2012English

Thin Dysprosium Oxide Films Formed by Rapid Thermal Annealing on Porous SiC Substrate

Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2018English

The Annealing Mechanism of the Radiation-Induced Vacancy-Oxygen Defect in Silicon

Journal of Applied Physics
AstronomyPhysics
2012English

Rapid Thermal Annealing of Size-Controlled Si Nanocrystals: Dependence of Interface Defect Density on Thermal Budget

Journal of Applied Physics
AstronomyPhysics
2011English

Evidence of Annealing Effects on a High-Density Si/SiO2 Interfacial Layer

Applied Physics Letters
AstronomyPhysics
1997English

SiC Schottky-Barrier Diodes Formed With TiBx and ZrBx Amorphous Layers

Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2004English

Profile of CO2, CO, and H2 Emissions From Thermal Oxidation of Polish Coals

Materials
Materials ScienceCondensed Matter Physics
2020English

Direct Observation of Oxygen Vacancy in Mullite, 1.86Al2O3•SiO2 by High Resolution Electron Microscopy

Proceedings of the Japan Academy
1975English

Surface Dissolution and Diffusion of Oxygen Molecules in SiO2 Glass

Journal of the Ceramic Society of Japan
Materials ChemistryChemistryCondensed Matter PhysicsCompositesCeramics
2004English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy