Interfacial Charge Effects on Electron Transport in III-Nitride Metal Insulator Semiconductor Transistors

Applied Physics Letters - United States
doi 10.1063/1.3653805
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors

Applied Physics Letters
AstronomyPhysics
2001English

Charge Storage and Carrier Transport at Organic Semiconductor-Insulator Interface

Hyomen Kagaku
2008English

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Scientific Reports
Multidisciplinary
2019English

Metal-Insulator-Semiconductor Photodetectors

Sensors
InstrumentationInformation SystemsElectronic EngineeringBiochemistryAnalytical ChemistryMolecular Physics,ElectricalAtomicMedicineOptics
2010English

III–V Nanowire Complementary Metal–Oxide Semiconductor Transistors Monolithically Integrated on Si

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2015English

Determining the Interfacial Density of States in Metal-Insulator-Semiconductor Devices Based on Poly(3-Hexylthiophene)

Applied Physics Letters
AstronomyPhysics
2008English

Interfacial Charge Transfer in Nanoscale Polymer Transistors

Nano Research
Electronic EngineeringNanotechnologyNanoscienceElectricalMaterials Science
2008English

Low Dielectric Constant-Based Organic Field-Effect Transistors and Metal-Insulator-Semiconductor Capacitors

English

Gallium Nitride Metal-Semiconductor-Metal Photodetectors Prepared on Silicon Substrates

Journal of Applied Physics
AstronomyPhysics
2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy