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Surface Roughness in InGaAs Channels of High Electron Mobility Transistors Depending on the Growth Temperature: Strain Induced or Due to Alloy Decomposition
Journal of Applied Physics
- United States
doi 10.1063/1.367517
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Categories
Astronomy
Physics
Date
June 15, 1998
Authors
F. Peiró
A. Cornet
J. R. Morante
M. Beck
M. A. Py
Publisher
AIP Publishing
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