On the Effect of the Underlying ZnO:Al Layer on the Crystallization Kinetics of Hydrogenated Amorphous Silicon

Applied Physics Letters - United States
doi 10.1063/1.4809517
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Effect of an Oxide Cap Layer and Fluorine Implantation on the Metal-Induced Lateral Crystallization of Amorphous Silicon

ECS Journal of Solid State Science and Technology
OpticalElectronicMagnetic Materials
2012English

Impact of Deposition Conditions on the Crystallization Kinetics of Amorphous GeTe Films

Journal of Materials Science
Mechanics of MaterialsMaterials ScienceMechanical Engineering
2015English

Optical Properties of Hydrogenated Amorphous Silicon

Journal of Applied Physics
AstronomyPhysics
1986English

The Effect of Ion-Surface and Ion-Bulk Interactions During Hydrogenated Amorphous Silicon Deposition

Journal of Applied Physics
AstronomyPhysics
2007English

Hydrogenated Amorphous Silicon Sensors Based on Thin Film on ASIC Technology

English

Critical Oxygen Concentration in Hydrogenated Amorphous Silicon Solar Cells Dependent on the Contamination Source

Applied Physics Letters
AstronomyPhysics
2010English

Techniques for Measuring the Composition of Hydrogenated Amorphous Silicon–germanium Alloys

Journal of Non-Crystalline Solids
Condensed Matter PhysicsMaterials ChemistryOpticalMagnetic MaterialsCompositesElectronicCeramics
2000English

Crystallization Kinetics of Al86Ni8Gd6 Amorphous Alloy

Journal of Non-Crystalline Solids
Condensed Matter PhysicsMaterials ChemistryOpticalMagnetic MaterialsCompositesElectronicCeramics
2013English

Controlled Crystallization of the Amorphous Phase in Silicon Nitride Ceramics

Journal of the American Ceramic Society
CompositesMaterials ChemistryCeramics
1987English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy