Amanote Research

Amanote Research

    RegisterSign In

Nitridation of Si Substrate Surface During MOCVD Growth of InN

doi 10.7567/ssdm.1992.s-ii-21
Full Text
Open PDF
Abstract

Available in full text

Date

January 1, 1992

Authors
Akio YAMAMOTOHiroyuki KITAJIMAMitsunori TSUJINO
Publisher

The Japan Society of Applied Physics


Related search

InN Nano-Column Grown on Si (111) Substrate Using Au Catalyst by MOCVD

2008English

Growth of Vertical GaN Nano-Column on Au Droplet/Si(111) Substrate Using Pulsed Flow MOCVD Method

2007English

Formation of Si3N4 During the Direct Nitridation of Si Single Crystal

Journal of the Ceramic Society of Japan
1996English

Growth of InN Hexagonal Microdisks

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2016English

Buffer Optimization for Crack-Free GaN Epitaxial Layers Grown on Si(1 1 1) Substrate by MOCVD

Journal of Physics D: Applied Physics
SurfacesUltrasonicsCondensed Matter PhysicsAcousticsOpticalMagnetic MaterialsFilmsCoatingsElectronic
2008English

Nitridation Mechanism of Si Compacts Studied by Transmission Electron Microscopy

Materials Transactions, JIM
1996English

Microstructure of GaN Grown on (111) Si by MOCVD

MRS Internet Journal of Nitride Semiconductor Research
1999English

In situInvestigation of Growth Mechanism During Molecular Beam Epitaxy of In-Polar InN

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2011English

Refractory Metal/Si Substrate Interfacial Reactions During ULSI Processing.

Materia Japan
1996English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy