Radiation/Annealing-Induced Structural Changes in GexAs40-xS60 Glasses as Revealed From High-Energy Synchrotron X-Ray Diffraction Measurements
Semiconductor Physics, Quantum Electronics and Optoelectronics - Ukraine
doi 10.15407/spqeo15.04.310
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December 12, 2012
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Co. Ltd. Ukrinformnauka