(PDF) Self-Consistent Scattering Analysis of

Self-Consistent Scattering Analysis of Al0.2Ga0.8N/AlN/GaN/AlN Heterostructures Grown on 6h-SiC Substrates Using Photo-Hall Effect Measurements

Journal of Physics Condensed Matter - United Kingdom

doi 10.1088/0953-8984/20/04/045208

Full Text

Abstract

Available in full text

Categories

Materials Science

Condensed Matter Physics

Date

January 8, 2008

Authors

Publisher

IOP Publishing

Related search

Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures

Thin Solid Films

Materials Chemistry

Magnetic Materials

English

GaN Layers Grown by HVPE on P-Type 6h-SiC Substrates

MRS Internet Journal of Nitride Semiconductor Research

English

Distribution of Dislocations Near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

Materials Science

Inorganic Chemistry

Chemical Engineering

Condensed Matter Physics

English

Self-Assembled GaN Quantum Wires on GaN/AlN Nanowire Templates

Materials Science

English

Band Offsets of Non-Polar A-Plane GaN/AlN and AlN/GaN Heterostructures Measured by X-Ray Photoemission Spectroscopy

Nanoscale Research Letters

Materials Science

Condensed Matter Physics

English

The Size-Quantized Oscillations of the Optical-Phonon-Limited Electron Mobility in AlN/GaN/AlN Nanoscale Heterostructures

Journal of Physics: Conference Series

English

Band Discontinuities in Zinc-Blende and Wurtzite AlN/SiC Heterostructures

Physical Review B

English

Quantitative Mobility Spectrum Analysis of AlGaN∕GaN Heterostructures Using Variable-Field Hall Measurements

Applied Physics Letters

English