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High Performance, Strained-Ge, Heterostructure P-MOSFETs
doi 10.1007/978-3-211-72861-1_5
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Date
Unknown
Authors
Tejas Krishnamohan
Donghyun Kim
Christoph Jungemann
Anh-Tuan Pham
Bernd Meinerzhagen
Yoshio Nishi
Krishna C. Saraswat
Publisher
Springer Vienna
