High Performance, Strained-Ge, Heterostructure P-MOSFETs

doi 10.1007/978-3-211-72861-1_5
Full Text
Abstract

Available in full text

Date

Unknown

Authors
Publisher

Springer Vienna

Related search

High-Quality NiGe/Ge Diodes for Schottky Barrier MOSFETs

Materials Science in Semiconductor Processing
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2008English

Vertical InAs/InGaAs Heterostructure MOSFETs on Si

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2017English

Theory of Hole Mobility in Strained Ge and III-V P-Channel Inversion Layers With High-Κ Insulators

Journal of Applied Physics
AstronomyPhysics
2010English

DFM of Strained-Engineered MOSFETs Using Technology CAD

American Journal of Engineering and Applied Sciences
Geotechnical EngineeringEnergy EngineeringEngineering GeologyEngineeringChemical EngineeringPower TechnologyEnvironmental EngineeringComputer Science
2010English

Pseudomorphic Silicon/Germanium Superlattices in MOS Capacitors Towards Sub-Surface Channel Heterostructure P-Type MOSFETs.

English

Axial Ge/Si Nanowire Heterostructure Tunnel FETs

2010English

Influence of Strain on the Electrical Properties of Ge Channel in Modulation-Doped P-Si0.5Ge0.5/Ge/Si1-xGex Heterostructure

1990English

Characterization of Strain in Si for High Performance MOSFETs

2007English

New Optical Transitions in Strained Si-Ge Superlattices

Physical Review B
1987English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy