A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots

Materials Research Society Symposium - Proceedings - United States
doi 10.1557/proc-642-j1.4.1
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Third-Harmonic Generation in InAs/GaAs Self-Assembled Quantum Dots

Physical Review B
1999English

Carrier Escape Dynamics in Multilayered Self-Assembled InAs∕GaAs Quantum Dots

2010English

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

Physical Review Letters
AstronomyPhysics
2000English

Determination of Spin Polarization in InAs∕GaAs Self-Assembled Quantum Dots

Applied Physics Letters
AstronomyPhysics
2008English

Photoreflectance Characterization of InAs/GaAs Self-Assembled Quantum Dots Grown by ALMBE

European Physical Journal B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2000English

Raman Study of the Topology of InAs/GaAs Self-Assembled Quantum Dots

Journal of Applied Physics
AstronomyPhysics
1999English

Infrared Second-Order Optical Susceptibility in InAs/GaAs Self-Assembled Quantum Dots

Physical Review B
2000English

Extended Wavelength Emission to 1.3μm in Nitrided InAs∕GaAs Self-Assembled Quantum Dots

Journal of Applied Physics
AstronomyPhysics
2005English

Correlating Structure, Strain, and Morphology of Self-Assembled InAs Quantum Dots on GaAs

Applied Physics Letters
AstronomyPhysics
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy