Amanote Research
Register
Sign In
Influence of Applied Current Density on the Nanostructural and Light Emitting Properties of N-Type Porous Silicon
International Journal of Modern Physics B
- Singapore
doi 10.1142/s0217979215500939
Full Text
Open PDF
Abstract
Available in
full text
Categories
Nonlinear Physics
Condensed Matter Physics
Statistical
Date
May 25, 2015
Authors
A. Cetinel
N. Artunç
G. Sahin
E. Tarhan
Publisher
World Scientific Pub Co Pte Lt
Related search
Nanostructural and Nanochemical Investigation of Luminescent Photoelectrochemically Etched Porous N-Type Silicon
Journal de Physique I
Nanostructural Effect of ZnO on Light Extraction Efficiency of Near-Ultraviolet Light-Emitting Diodes
Journal of Nanomaterials
Materials Science
Nanotechnology
Nanoscience
Photothermal Characterization of Electrochemical Etching Processed N-Type Porous Silicon
Physical Review Letters
Astronomy
Physics
Influence of Indium-Tin-Oxide and Emitting-Layer Thicknesses on Light Outcoupling of Perovskite Light-Emitting Diodes
Nano Convergence
Materials Science
Engineering
Electrical and Photoelectrical Properties of Iodine Modified Porous Silicon on Silicon Substrates
Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic Engineering
Optics
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Electronic
Influence of Current Density on the Structure and Dielectric Properties of Anodic Oxide Films on Niobium
Journal of The Surface Finishing Society of Japan
Influence of the Direction of Spontaneous Orientation Polarization on the Charge Injection Properties of Organic Light-Emitting Diodes
Applied Physics Letters
Astronomy
Physics
Photophysical Properties of Blue-Emitting Silicon Nanoparticles
Journal of Physical Chemistry C
Surfaces
Energy
Nanoscience
Theoretical Chemistry
Optical
Magnetic Materials
Films
Nanotechnology
Electronic
Coatings
Physical
Formation of Porous Silicon on a Highly Doped P-Type Monocrystalline Silicon
Doklady BGUIR