Amanote Research
Register
Sign In
Observation of Carrier Densities in Silicon Devices by Infrared Emission
Journal of Physics E: Scientific Instruments
doi 10.1088/0022-3735/10/8/020
Full Text
Open PDF
Abstract
Available in
full text
Date
August 1, 1977
Authors
J C White
J G Smith
Publisher
IOP Publishing
Related search
Near-Infrared Free Carrier Absorption in Heavily Doped Silicon
Journal of Applied Physics
Astronomy
Physics
Coherent Thermal Infrared Emission by Two-Dimensional Silicon Carbide Gratings
Physical Review B
Hyperuniform Disordered Waveguides and Devices for Near Infrared Silicon Photonics
Scientific Reports
Multidisciplinary
Calculation of Defect Densities in Nano-Crystalline and Amorphous Silicon Devices Using Differential Capacitance Measurements
Photoresponse Enhancement in the Near Infrared Wavelength Range of Ultrathin Amorphous Silicon Photosensitive Devices by Integration of Silver Nanoparticles
Applied Physics Letters
Astronomy
Physics
Carrier Concentration and Lattice Absorption in Bulk and Epitaxial Silicon Carbide Determined Using Infrared Ellipsometry
Physical Review B
Picosecond Charge Transport in Rutile at High Carrier Densities Studied by Transient Terahertz Spectroscopy
Physical Review B
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Infrared Semiconductor Devices
The Review of Laser Engineering
Analysis of Mechanism of Infrared Absorption Caused by Nitrogen in Silicon
SHINKU
