Amanote Research
Register
Sign In
Large-Signal Modelling of V.H.F. And Microwave Power Transistors.
doi 10.22215/etd/1975-00286
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Adrian Alden
Publisher
Carleton University
Related search
Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors
A Reappraisal of Optimum Output Matching Conditions in Microwave Power Transistors
IEEE Transactions on Microwave Theory and Techniques
Electronic Engineering
Radiation
Electrical
Condensed Matter Physics
Jammers Signal Power Modelling in the Wi-Fi Band
MATEC Web of Conferences
Materials Science
Engineering
Chemistry
Electro-Optic Near Field Imaging of High-Power RF/Microwave Transistors in Plastic Packages
COMPARATIVE ANALYSIS OF AlGaN/GaN MICROWAVE TRANSISTORS
Electronic engineering. Series 2. Semiconductor device
Linear Dynamic Space Mapping Approach for Large-Signal Statistical Modeling of Microwave Devices
Modelling and Characterization of Double Diffused Bipolar Transistors.
Modelling of Insulated-Gate Field-Effect Transistors.
Investigation of the Defects in Ultrasonic Bonding of Microwave Transistors
Electronic engineering. Series 2. Semiconductor device