Junction–temperature Measurement in GaN Ultraviolet Light-Emitting Diodes Using Diode Forward Voltage Method

Applied Physics Letters - United States
doi 10.1063/1.1795351
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Junction Temperature in Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2005English

InGaN/GaN Light-Emitting Diode With a Polarization Tunnel Junction

Applied Physics Letters
AstronomyPhysics
2013English

Vertical-Injection Ultraviolet Light-Emitting Diodes With GaN-Free Structures

2008English

Effect of Temperature and Strain on the Optical Polarization of (In)(Al)GaN Ultraviolet Light Emitting Diodes

Applied Physics Letters
AstronomyPhysics
2011English

Ultraviolet/Blue Light-Emitting Diodes Based on Single Horizontal ZnO Microrod/GaN Heterojunction

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2014English

Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Scientific Reports
Multidisciplinary
2017English

Emission Mechanisms and Effective Method for Improvement of Luminescence Efficiency in GaN-based Blue and Ultraviolet Light-Emitting Diodes

Journal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi)
Electronic EngineeringElectrical
2000English

Light Extraction Improvement of GaN-based Light-Emitting Diodes Using Patterned Undoped GaN Bottom Reflection Gratings

2009English

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted From a Si Substrate

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy