Tunneling Anisotropic Magnetoresistance in Epitaxial CoFe/n-GaAs Junctions

Applied Physics Letters - United States
doi 10.1063/1.3130092
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Four-State Magnetoresistance in Epitaxial CoFe-Based Magnetic Tunnel Junctions

IEEE Transactions on Magnetics
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2007English

Effects of B and C Doping on Tunneling Magnetoresistance in CoFe/MgO Magnetic Tunnel Junctions

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon P-N Junctions

Scientific Reports
Multidisciplinary
2015English

Coexistence of Tunneling Magnetoresistance and Josephson Effects in SFIFS Junctions

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2017English

Large Inverse Tunneling Magnetoresistance in Co2Cr0.6Fe0.4Al∕MgO∕Co80Fe20 Magnetic Tunnel Junctions

Applied Physics Letters
AstronomyPhysics
2007English

Relationship Between the Barrier and Magnetoresistance Effect in Ferromagnetic Tunneling Junctions

Journal of the Magnetics Society of Japan
1997English

Anisotropic Magnetoresistance and Planar Hall Effect in Epitaxial Films of La0.7Ca0.3MnO3

Journal of Applied Physics
AstronomyPhysics
2009English

Studies of Anisotropic and Giant Magnetoresistance in Co/Cu(111) Epitaxial Multilayers

Journal of Applied Physics
AstronomyPhysics
1996English

Understanding Tunneling Magnetoresistance During Thermal Annealing in MgO-based Junctions With CoFeB Electrodes

Physical Review B
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy