Conversion of Multi-Layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

Nanoscale Research Letters - Germany
doi 10.1186/s11671-018-2721-0
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Springer Science and Business Media LLC

Related search

Thermally Induced Conduction Type Conversion in N-Type InP

Journal of Applied Physics
AstronomyPhysics
1999English

Synthesis and Characterization of N-Type and P-Type Thermoelectric Oxides

Transactions of the Materials Research Society of Japan
2010English

P-Type and N-Type Semiconductivities of Solid Yttrium Sulfide

Transactions of the Japan Institute of Metals
1984English

Studies of Nickelous and Cobaltous Oxide and Effects of N-Type and P-Type Dopants

1970English

Nonconjugated Red-Emitting Dendrimers With P-Type and/or N-Type Peripheries

English

Proposed New N-Multilevel Family of Topologies for T-Type Inverter

IEICE Electronics Express
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2017English

Performance Analysis of N-Type Gated Diode Three-Transistor DRAM in 180nm Technology

HELIX
2018English

Electrical and Gas Sensing Properties of P-Type Co3O4 Loaded N-Type TiO2 Nanotubes Heterostructures

Proceedings
2017English

Deep Levels in Iron Doped N- And P-Type 4h-SiC

Journal of Applied Physics
AstronomyPhysics
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy