Developing Multi-Layer Mirror Technology Near 45 Nm Using Sc/Si Interfaces

doi 10.2172/15009781
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Office of Scientific and Technical Information (OSTI)

Related search

Design and Analysis of Current Mirror OTA in 45 Nm and 90 Nm CMOS Technology for Bio-Medical Application

Bulletin of Electrical Engineering and Informatics
ControlSystems EngineeringInformation SystemsElectronic EngineeringInstrumentationComputer NetworksHardwareCommunicationsOptimizationElectricalComputer ScienceArchitecture
2020English

Technology-Aware Multi-Domain Multi-Layer Routing

Computer Communications
Computer NetworksCommunications
2015English

Multi-Layer Mirror for Thomson Scattering Diagnostic Experiment on T-10 Tokamak

Problems of Atomic Science and Technology, Series Thermonuclear Fusion
High Energy PhysicsNuclearEngineeringNuclear EnergyCondensed Matter Physics
2013English

Novel Read-Out Technology for Multi-Layer Optical Disc Using Polarization Longitudinal Device

The Review of Laser Engineering
2007English

Threshold Voltage Instability of 45-Nm-Node Poly-Si- Or FUSI-Gated SRAM Transistors Caused by Dopant Lateral Diffusion in Poly-Si

2006English

Coordination and Interface Analysis of Atomic-Layer-Deposition Al2O3 on Si(001) Using Energy-Loss Near-Edge Structures

Applied Physics Letters
AstronomyPhysics
2003English

Visible Light Emission From Controlled Α-Si/SiN Multi-Layer Structures

2007English

4. Driver Mirror-Checking Action Detection Using Multi-Modal Signals

2017English

Surface Evaluation Technology Using Near-Field Optics

Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
Mechanical Engineering
2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy