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Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
doi 10.7567/ssdm.2013.j-4-2
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Date
September 26, 2013
Authors
M.K. Eo
H.S. Choi
S.Y. Jang
W.S. Kim
J.H. Shin
T.H. Jang
H.I. Kwon
Publisher
The Japan Society of Applied Physics
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