Ultra-Thin Benzocyclobutene Bonding of III–V Dies Onto SOI Substrate

Electronics Letters - United Kingdom
doi 10.1049/el:20050807
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institution of Engineering and Technology (IET)

Related search

Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films

1997English

Floating Body and Hot Carrier Effects in Ultra-Thin Film SOI MOSFETs

Le Journal de Physique IV
1996English

Surface-Activating-Bonding-Based Low-Resistance Si/Iii-v Junctions

Electronics Letters
Electronic EngineeringElectrical
2013English

III-V/Silicon First Order Distributed Feedback Lasers Integrated on SOI Waveguide Circuits

2013English

Hybrid III–V/Si Distributed-Feedback Laser Based on Adhesive Bonding

IEEE Photonics Technology Letters
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2012English

Advancement of Heteroepitaxial III-V/Si Thin Films Through Defect Characterization

Microscopy and Microanalysis
Instrumentation
2016English

Origin of Insulating Weak-Ferromagnetic Phase in Ultra-Thin La0.67Sr0.33MnO3 Films on SrTiO3 Substrate

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2017English

Chapitre v. Les Haines Entre Soi

2014English

III-V/Silicon Photonics for Optical Interconnects: Bonding Technology and Integrated Devices

2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy