Influence of AlN(0001) Surface Reconstructions on the Wettability of an Al/AlN System: A First-Principle Study

Materials - Switzerland
doi 10.3390/ma11050775
Full Text
Abstract

Available in full text

Date
Authors
Publisher

MDPI AG

Related search

Reconstructions of the AlN(0001) Surface

Physical Review B
2003English

AlN Interlayer to Improve the Epitaxial Growth of SmN on GaN (0001)

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2016English

Structural and Elastic Properties of TiN and AlN Compounds: First-Principles Study

Materials Science-Poland
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2014English

The Extraordinary Role of the AlN Interlayer in Growth of AlN Sputtered on Ti Electrodes

Applied Physics Letters
AstronomyPhysics
2013English

The First Principle Calculation of Electronic and Optical Properties of AlN, GaN and InN Compounds Under Hydrostatic Pressure

Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2006English

Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2006English

Liquid Phase Epitaxial Growth of AlN Using Ga-Al Flux

Materia Japan
2014English

Relaxation Rate and Polarization Charge Density Model for AlN/Al$_{x}$Ga$_{1 - X}$N/AlN Heterostructures

Turkish Journal of Electrical Engineering and Computer Sciences
Electronic EngineeringElectricalComputer Science
2017English

Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures

Thin Solid Films
SurfacesAlloysOpticalInterfacesMetalsMaterials ChemistryMagnetic MaterialsFilmsCoatingsElectronic
2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy