The Extraordinary Role of the AlN Interlayer in Growth of AlN Sputtered on Ti Electrodes

Applied Physics Letters - United States
doi 10.1063/1.4835035
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

AlN Interlayer to Improve the Epitaxial Growth of SmN on GaN (0001)

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2016English

Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films

Physica Status Solidi - Rapid Research Letters
Materials ScienceCondensed Matter Physics
2020English

Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures

Thin Solid Films
SurfacesAlloysOpticalInterfacesMetalsMaterials ChemistryMagnetic MaterialsFilmsCoatingsElectronic
2013English

The Size-Quantized Oscillations of the Optical-Phonon-Limited Electron Mobility in AlN/GaN/AlN Nanoscale Heterostructures

Journal of Physics: Conference Series
AstronomyPhysics
2007English

Influence of AlN(0001) Surface Reconstructions on the Wettability of an Al/AlN System: A First-Principle Study

Materials
Materials ScienceCondensed Matter Physics
2018English

Electrical and Optical Properties of the AlN/Cu/AlN Multilayer Films by Sputtering

SHINKU
2003English

Correlation Between ZnO Nanowire Growth and the Surface of AlN Substrate

English

Reconstructions of the AlN(0001) Surface

Physical Review B
2003English

Study on AlN Growth Conditions for Hydride Vapor Phase Epitaxy

Transactions of the Materials Research Society of Japan
2015English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy