Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of N-Type Β-FeSi2 Thin Films and P-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering
Advances in Materials Science and Engineering - Egypt
doi 10.1155/2017/6590606
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Date
January 1, 2017
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Hindawi Limited