Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4h-SiC

Acta Physica Polonica A - Poland
doi 10.12693/aphyspola.125.1042
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Physics, Polish Academy of Sciences

Related search

Conductance Deep-Level Transient Spectroscopic Study of 4h- SiC MESFET and Traps

2012English

Clustering of Vacancy Defects in High-Purity Semi-Insulating SiC

Physical Review B
2007English

Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

Acta Physica Polonica A
AstronomyPhysics
2005English

First-Principles Study on Interlayer States at the 4h-SiC/SiO2Interface and the Effect of Oxygen-Related Defects

Journal of the Physical Society of Japan
AstronomyPhysics
2016English

Effect of High-Energy Protons on 4h-SiC Radiation Detectors

Lithuanian Journal of Physics
AstronomyPhysics
2005English

Neutron Radiation Effect on 4h-SiC MESFETs and SBDs

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2010English

Channel Width Effect on the Operation of 4h-SiC Vertical JFETs

Physica Status Solidi (A) Applications and Materials Science
SurfacesElectronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronicInterfaces
2016English

Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC

Materials Science Forum
2010English

Deep Levels in Iron Doped N- And P-Type 4h-SiC

Journal of Applied Physics
AstronomyPhysics
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy