First-Principles Study on Interlayer States at the 4h-SiC/SiO2Interface and the Effect of Oxygen-Related Defects

Journal of the Physical Society of Japan - Japan
doi 10.7566/jpsj.85.024701
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Physical Society of Japan

Related search

First-Principles Calculation Study of Epitaxial Graphene Layer on 4h-SiC (0001) Surface

e-Journal of Surface Science and Nanotechnology
SurfacesMechanics of MaterialsCondensed Matter PhysicsInterfacesNanoscienceBioengineeringFilmsBiotechnologyCoatingsNanotechnology
2016English

Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4h-SiC

Acta Physica Polonica A
AstronomyPhysics
2014English

First-Principles Study of Oxygen-deficientLaNiO3structures

Physical Review B
2015English

Channel Width Effect on the Operation of 4h-SiC Vertical JFETs

Physica Status Solidi (A) Applications and Materials Science
SurfacesElectronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronicInterfaces
2016English

Effect and Characterization of Stone–Wales Defects on Graphene Quantum Dot: A First-Principles Study

Condensed Matter
2018English

Neutron Radiation Effect on 4h-SiC MESFETs and SBDs

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2010English

Effect of Hydrogen Passivation on the Decoupling of Graphene on SiC(0001) Substrate: First-Principles Calculations

Scientific Reports
Multidisciplinary
2017English

First-Principles Study of Cl Diffusion in Cubic SiC

Journal of Applied Physics
AstronomyPhysics
2013English

First-Principles Study of the Effect of Native Defects on Spin Polarization and Exchange Coupling Interaction in Semimetal V3O4

ACS Omega
ChemistryChemical Engineering
2020English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy