Experimental Evidence of Carrier Leakage in InGaAsN Quantum-Well Lasers

Applied Physics Letters - United States
doi 10.1063/1.1611279
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Effect of Nitrogen on Gain and Efficiency in InGaAsN Quantum-Well Lasers

Applied Physics Letters
AstronomyPhysics
2005English

Non-Uniform Carrier Distribution in Multi-Quantum-Well Lasers

Applied Physics Letters
AstronomyPhysics
2003English

Direct Measurement of Lateral Carrier Leakage in 1.3-Μm InGaAsP Multiple-Quantum-Well Capped Mesa Buried Heterostructure Lasers

IEEE Journal of Quantum Electronics
Electronic EngineeringCondensed Matter PhysicsMolecular Physics,ElectricalAtomicOptics
2002English

Carrier Lifetime and Recombination in Long-Wavelength Quantum-Well Lasers

IEEE Journal of Selected Topics in Quantum Electronics
ElectricalElectronic EngineeringOpticsAtomicMolecular Physics,
1999English

Carrier Dynamics in Quantum Cascade Lasers

Acta Physica Polonica A
AstronomyPhysics
2005English

Ultrafast Carrier Dynamics of InGaAsN and InGaAs Single Quantum Wells

Journal of Physics D: Applied Physics
SurfacesUltrasonicsCondensed Matter PhysicsAcousticsOpticalMagnetic MaterialsFilmsCoatingsElectronic
2008English

Comparison of Experimental and Theoretical Gain-Current Relations in GaInP Quantum Well Lasers

Applied Physics Letters
AstronomyPhysics
2000English

The Influence of Growth Conditions on Carrier Recombination Mechanisms in 1.3 Μm GaAsSb/GaAs Quantum Well Lasers

Applied Physics Letters
AstronomyPhysics
2013English

Ultrabroadband Tunable External-Cavity Quantum Well Lasers

1990English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy