Direct Measurement of Lateral Carrier Leakage in 1.3-Μm InGaAsP Multiple-Quantum-Well Capped Mesa Buried Heterostructure Lasers

IEEE Journal of Quantum Electronics - United States
doi 10.1109/jqe.2002.802161
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)


Related search