Highly Stable Fluorinated Plasma CVD Silicon Nitride Film by SiH4 Addition for ULSI Passivation

doi 10.7567/ssdm.1989.a-4-2
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Improvement of Silicon Nitride Film Deposition Rate by Low Frequency Double Plasma CVD Methode.

SHINKU
1991English

Hydrophilic Silicon Oxide Film by Pulsed Plasma CVD

Shinku
2007English

Improved Silicon Surface Passivation Achieved by Negatively Charged Silicon Nitride Films

Applied Physics Letters
AstronomyPhysics
2009English

Hard Carbon Film Coating by Plasma CVD.

SHINKU
1988English

Preparation of Crystallized Carbon Nitride Based on Microwave Plasma CVD-Effect of Carbon Source and H2 Addition to Gas System on Film Properties-

Journal of The Surface Finishing Society of Japan
2010English

Uniformity and Passivation Research of Al2O3 Film on Silicon Substrate Prepared by Plasma-Enhanced Atom Layer Deposition

2016English

Self-Assembled Fluorinated Polymer Passivation Layer for Efficient Perovskite Thin-Film Solar Cells

Chemistry Letters
Chemistry
2020English

N, NH, and NH2 Radical Densities in a Remote Ar–NH3–SiH4 Plasma and Their Role in Silicon Nitride Deposition

Journal of Applied Physics
AstronomyPhysics
2006English

Fluorinated SiC CVD

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy