In Situ Single Wavelength Ellipsometry Studies of High Rate Hydrogenated Amorphous Silicon Growth Using a Remote Expanding Thermal Plasma

Journal of Applied Physics - United States
doi 10.1063/1.1321793
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

A Study of Electronic Defects in Hydrogenated Amorphous Silicon Prepared by the Expanding Thermal Plasma Technique

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2003English

Formation of Cationic Silicon Clusters in a Remote Silane Plasma and Their Contribution to Hydrogenated Amorphous Silicon Film Growth

Journal of Applied Physics
AstronomyPhysics
1999English

HIGH RESOLUTION NMR OF29Si IN AMORPHOUS HYDROGENATED SILICON

Le Journal de Physique Colloques
1981English

Thermal-Equilibrium Defects in Undoped Hydrogenated Amorphous Silicon, Silicon-Carbon, and Silicon-Nitrogen

Physical Review B
1990English

Quality Improvement of Plasma-Beam-Deposited Amorphous Hydrogenated Carbon With Higher Growth Rate

Plasma Sources Science and Technology
Condensed Matter Physics
1996English

Nanoparticle Deposition in Hydrogenated Amorphous Silicon Films During Rf Plasma Deposition

Applied Physics Letters
AstronomyPhysics
1996English

Near Infrared Photoluminescence of the Hydrogenated Amorphous Silicon Thin Films With In-Situ Embedded Silicon Nanoparticles

Ceramics - Silikaty
Analytical ChemistryTheoretical ChemistryMaterials ChemistryChemical EngineeringCompositesCeramicsPhysical
2017English

Optical Properties of Hydrogenated Amorphous Silicon

Journal of Applied Physics
AstronomyPhysics
1986English

Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon at Atmospheric Pressure

Plasma Sources Science and Technology
Condensed Matter Physics
2003English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy