Surface Stress During Silicon Oxidation Using Plasma of Krypton and Oxygen Mixture.

SHINKU
doi 10.3131/jvsj.44.206
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Vacuum Society of Japan

Related search

Surface Chemistry During Plasma Etching of Silicon

Pure and Applied Chemistry
ChemistryChemical Engineering
1996English

Parameters of DBD Plasma on Mixture of Mercury Debromide Vapor, Helium and Krypton

Scientific Herald of Uzhhorod University.Series Physics
2013English

Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation

2018English

Effect of H2 Gas Addition on Si Oxidation Process With Ar and O2 Mixture Surface Wave Plasma

2011English

Preparation of Oxygen Plasma Jet and Oxidation of Titanium

Denki Kagaku oyobi Kogyo Butsuri Kagaku
1970English

Surface Chemistry of Aerosolized Nanoparticles:Thermal Oxidation of Silicon

English

Residual Stress in Silicon Substrate With Shallow Trenches on Surface After Local Thermal Oxidation

JSME international journal. Ser. A, Mechanics and material engineering
1995English

Thermal Desorption of Krypton Implanted Into Silicon

Acta Physica Polonica A
AstronomyPhysics
2017English

Tight-Binding Molecular Dynamics Simulation of Silicon Plasma Oxidation.

Hyomen Kagaku
2000English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy