Influence of Ge Ion Implantation Into Silicon Dioxide/Silicon Structure on Charge Accumulation Under Low–Energy Stationary Radiation
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
doi 10.17073/1609-3577-2012-4-28-32
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Date
March 15, 2015
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National University of Science and Technology MISiS