Precise Control of Epitaxy of Graphene by Microfabricating SiC Substrate

Applied Physics Letters - United States
doi 10.1063/1.4740271
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Substrate Doping Effects on Raman Spectrum of Epitaxial Graphene on SiC

Journal of Applied Physics
AstronomyPhysics
2010English

Resonance Broadening and Tuning of Split Ring Resonators by Top-Gated Epitaxial Graphene on SiC Substrate

Applied Physics Letters
AstronomyPhysics
2013English

SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer

Electronic Materials Letters
OpticalElectronicMagnetic Materials
2014English

Effect of Hydrogen Passivation on the Decoupling of Graphene on SiC(0001) Substrate: First-Principles Calculations

Scientific Reports
Multidisciplinary
2017English

The Influence of Substrate Morphology on Thickness Uniformity and Unintentional Doping of Epitaxial Graphene on SiC

Applied Physics Letters
AstronomyPhysics
2012English

GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.

SHINKU
1985English

Precise Determination of Graphene Functionalization by in Situ Raman Spectroscopy

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2017English

Drawing Graphene Nanoribbons on SiC by Ion Implantation

Applied Physics Letters
AstronomyPhysics
2012English

Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.

SHINKU
1992English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy