Comparative Analysis of 6T, 7T, 8T, 9T, and 10T Realistic CNTFET Based SRAM

Journal of Nanotechnology - Egypt
doi 10.1155/2017/4575013
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Hindawi Limited

Related search

Design of 8T CNTFET SRAM for Ultra-Low Power Microelectronic Applications

International Journal of Recent Technology and Engineering
EngineeringManagement of TechnologyInnovation
2019English

A Comparative Study of 6T and 8T SRAM Cell With Improved Read and Write Margins in 130 Nm CMOS Technology

WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS
2020English

Analysis of 6T SRAM Cell in Different Technologies

Circulation in Computer Science
2017English

7T Based SRAM Topologies With Low Power and Higher SNM

International Journal of Innovative Technology and Exploring Engineering
Mechanics of MaterialsElectronic EngineeringCivilStructural EngineeringElectricalComputer Science
2019English

Systematic and Random Variability Analysis of Two Different 6t-Sram Layout Topologies

Microelectronics Journal
2013English

Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region

International Journal of Reconfigurable Computing
HardwareArchitecture
2015English

Analysis of 8T SRAM Cell at Various Process Corners at 65 Nm Process Technology

Circuits and Systems
2011English

Stability Analysis of Sub-Threshold 6T SRAM Cell at 45 Nm for IoT Application

International Journal of Recent Technology and Engineering
EngineeringManagement of TechnologyInnovation
2019English

A 65nm 8T Sub-Vt SRAM Employing Sense-Amplifier Redundancy

Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy