Electron Injection-Induced Effects in Si-Doped Β-Ga2O3

AIP Advances - United States
doi 10.1063/1.5079730
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Hole Traps and Persistent Photocapacitance in Proton Irradiated Β-Ga2O3 Films Doped With Si

APL Materials
Materials ScienceEngineering
2018English

Origin of Point Defects in Β-Ga2O3 Single Crystals Doped With Mg2+ Ions

Acta Physica Polonica A
AstronomyPhysics
2018English

Giant Tunnel-Electron Injection in Nitrogen-Doped Graphene

Physical Review B
2015English

Low Temperature Electron Mobility Exceeding 104 Cm2/v S in MOCVD Grown Β-Ga2O3

APL Materials
Materials ScienceEngineering
2019English

Enhancement of Photoluminescence From Cu-Doped Β-FeSi2/Si Heterostructures

2015English

Impact of Deep Level Defects Induced by High Energy Neutron Radiation in Β-Ga2O3

APL Materials
Materials ScienceEngineering
2019English

Ultrafast Spectroscopy and Red Emission From Β-Ga2O3/Β-Ga2S3 Nanowires

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2015English

High-Aspect Ratio Β-Ga2O3 Nanorods via Hydrothermal Synthesis

Nanomaterials
Materials ScienceChemical Engineering
2018English

Electrical Properties of Bulk Semi-Insulating Β-Ga2O3 (Fe)

Applied Physics Letters
AstronomyPhysics
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy