Origin of Point Defects in Β-Ga2O3 Single Crystals Doped With Mg2+ Ions

Acta Physica Polonica A - Poland
doi 10.12693/aphyspola.133.811
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Physics, Polish Academy of Sciences

Related search

Point and Extended Defects in Ultra Wide Band Gap Β-Ga2O3 Interfaces

Microscopy and Microanalysis
Instrumentation
2017English

Electron Injection-Induced Effects in Si-Doped Β-Ga2O3

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2019English

Hole Traps and Persistent Photocapacitance in Proton Irradiated Β-Ga2O3 Films Doped With Si

APL Materials
Materials ScienceEngineering
2018English

Topological Point Defects in Nematic Liquid Crystals

Philosophical Magazine
Condensed Matter Physics
2006English

Universal Symmetry Property of Point Defects in Crystals

Physical Review Letters
AstronomyPhysics
2000English

Excitation Position Sensitive Upconversion Emission of Lanthanide Ions Doped Β-NaYF4 Single Microcrystals

ChemNanoMat
Energy EngineeringRenewable EnergySustainabilityMaterials ChemistryBiomaterialsPower Technologythe Environment
2018English

Impact of Proton Irradiation on Conductivity and Deep Level Defects in Β-Ga2O3

APL Materials
Materials ScienceEngineering
2019English

Impact of Deep Level Defects Induced by High Energy Neutron Radiation in Β-Ga2O3

APL Materials
Materials ScienceEngineering
2019English

Origin and Structure of Polar Domains in Doped Molecular Crystals

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2016English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy