Temperature Dependence of Breakdown and Avalanche Multiplication in in/Sub 0.53/Ga/Sub 0.47/as Diodes and Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices - United States
doi 10.1109/ted.2003.816553
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Low Multiplication Noise Thin Al/Sub 0.6/Ga/Sub 0.4/as Avalanche Photodiodes

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2001English

Huge Anisotropic Magnetoresistance in Epitaxial Sm[sub 0.53]Sr[sub 0.47]MnO[sub 3] Thin Films

2011English

Индуцированный Фазовый Переход В Прозрачной Керамике PbMg-=SUB=-1/3-=/SUB=-Nb-=SUB=-2/3-=/SUB=-O-=SUB=-3-=/SUB=--xPb(Zr-=SUB=-0.53-=/SUB=-Ti-=SUB=-0.47-=/SUB=-)O-=SUB=-3-=/SUB=-

Журнал технической физики
2020English

Кинетика Процесса Поляризации В Прозрачной Керамике Pb(Mg-=sub=-1/3-=/SUB=-Nb-=SUB=-2/3-=/Sub=-)O-=sub=-3-=/SUB=--23Pb(Zr-=SUB=-0.53-=/SUB=-Ti-=SUB=-0.47-=/Sub=-)O-=sub=-3-=/Sub=-

Журнал технической физики
2019English

In0.49Ga0.51P/GaAs Heterojunction Bipolar Transistors (HBTs) on 200 Mm Si Substrates: Effects of Base Thickness, Base and Sub-Collector Doping Concentrations

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Program to Study the Process Parameters of OMVPE and Their Relationship to the Properties of Ga(0.47)In(0.53)As ON InP Substrates

1989English

Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors

1991English

Квантовые Точки InAs, Выращенные В Метаморфной Матрице in-=sub=-0.25-=/SUB=-Ga-=SUB=-0.75-=/SUB=-As Методом МОС-гидридной Эпитаксии

Журнал технической физики
2017English

Nonlinearities in the Base Emitter Junction of Heterojunction Bipolar Transistors

2000English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy