Amanote Research
Register
Sign In
Program to Study the Process Parameters of OMVPE and Their Relationship to the Properties of Ga(0.47)In(0.53)As ON InP Substrates
doi 10.21236/ada226618
Full Text
Open PDF
Abstract
Available in
full text
Date
November 1, 1989
Authors
I. Ahmed
Publisher
Defense Technical Information Center
Related search
Temperature Dependence of Breakdown and Avalanche Multiplication in in/Sub 0.53/Ga/Sub 0.47/as Diodes and Heterojunction Bipolar Transistors
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
An Ultra-Low-Power MMIC Amplifier Using 50-Nm $\Delta$ -Doped $\Hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \Hbox{Ga}_{0.47}\hbox{As}$ Metamorphic HEMT
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Molecular-Beam Epitaxy of the Half-Heusler Alloy NiMnSb on (In,Ga)As/InP (001)
Applied Physics Letters
Astronomy
Physics
Materials Properties and Dislocation Dynamics in InAsP Compositionally Graded Buffers on InP Substrates
Journal of Applied Physics
Astronomy
Physics
(In,Ga)As Sidewall Quantum Wires on Shallow-Patterned InP (311)A
Journal of Applied Physics
Astronomy
Physics
Optimization the Parameters of Hotwire Cutting Process to Enhance the Properties of Polystyrene Foam
Geomagnetic Disturbances and Their Relationship to Interplanetary Shock Parameters
Geophysical Research Letters
Earth
Planetary Sciences
Geophysics
Phenozan Influence on the Physiological-Biochemical Parameters of the Young Minks Leading to Their Advanced Properties
International Journal of Zoology
Animal Science
Zoology
Study on the Relationship Between College Undergraduates' Addiction to Webcasting and Their Loneliness