Amanote Research

Amanote Research

    RegisterSign In

Electronic Properties of the Zr–ZrO2–SiO2–Si(100) Gate Stack Structure

Journal of Applied Physics - United States
doi 10.1063/1.2181282
Full Text
Open PDF
Abstract

Available in full text

Categories
AstronomyPhysics
Date

March 15, 2006

Authors
C. C. FultonG. LucovskyR. J. Nemanich
Publisher

AIP Publishing


Related search

Structures and Electronic States of Si/SiO2 Interface.

Hyomen Kagaku
1999English

Gate-Stack Engineering for Self-Organized Ge-Dot/SiO2/SiGe-Shell MOS Capacitors

Frontiers in Materials
Materials Science
2016English

Dielectric and Optical Properties of Zr Silicate Thin Films Grown on Si(100) by Atomic Layer Deposition

Journal of Applied Physics
AstronomyPhysics
2009English

Electronic Structure, Phase Stability, and Cohesive Properties ofTi2XAl(X=Nb,V,Zr)

Physical Review B
1999English

Defect Generation at SiO2/Si(100) Interfaces by Metal Contamination

1988English

Structure of PbTe(SiO2)/SiO2multilayers Deposited on Si(111)

Journal of Applied Crystallography
BiochemistryGeneticsMolecular Biology
2010English

Frequency and Gate Voltage Effects on the Dielectric Properties and Electrical Conductivity of Al/SiO2/P-Si Metal-Insulator-Semiconductor Schottky Diodes

Journal of Applied Physics
AstronomyPhysics
2011English

X‐ray Scattering Studies of the SiO2/Si(001) Interfacial Structure

Applied Physics Letters
AstronomyPhysics
1991English

Structural and Electronic Properties of the SiC (100) Surfaces

Brazilian Journal of Physics
AstronomyPhysics
2006English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy