Structures and Electronic States of Si/SiO2 Interface.

Hyomen Kagaku
doi 10.1380/jsssj.20.732
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Surface Science Society Japan

Related search

Electroluminescence and Photoluminescence of Ge‐implanted Si/SiO2/Si Structures

Applied Physics Letters
AstronomyPhysics
1995English

Mechanical Stability of Ultrathin Ge∕Si Film on SiO2: The Effect of Si∕SiO2 Interface

Journal of Applied Physics
AstronomyPhysics
2005English

Study of SiO2/Si Interface by Surface Techniques

2011English

MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures

2017English

Influence of Backsurface Argon Bombardment on SiO2–Si Interface Characteristics

Applied Physics Letters
AstronomyPhysics
1996English

Study of High Temperature Reaction Between Ti and SiO2 at Interface in Ti/SiO2/TiSi2/Si System by XPS.

SHINKU
1986English

Electronic Properties of the Zr–ZrO2–SiO2–Si(100) Gate Stack Structure

Journal of Applied Physics
AstronomyPhysics
2006English

First Principle Study of Electronic Structures and Optical Properties of Ce-Doped SiO2

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Heterointerfaces: Atomic Structures, Electronic States, and Related Properties

Journal of the Ceramic Society of Japan
Materials ChemistryChemistryCondensed Matter PhysicsCompositesCeramics
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy