Amanote Research
Register
Sign In
Surface Versus Impurity-Doping Contributions in InAs Nanocrystal Field Effect Transistor Performance
doi 10.1021/acs.jpcc.9b05086.s001
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Unknown
Publisher
American Chemical Society (ACS)
Related search
Field Effect Transistor and Photo Transistor of Narrow Band Gap Nanocrystal Arrays Using Ionic Glasses
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
Impurity Sub-Band in Heavily Cu-Doped InAs Nanocrystal Quantum Dots Detected by Ultrafast Transient Absorption
Metal-Oxide-Semiconductor Field Effect Transistor Humidity Sensor Using Surface Conductance
Applied Physics Letters
Astronomy
Physics
Organic Field-Effect Transistors: Enhanced Charge Injection Properties of Organic Field-Effect Transistor by Molecular Implantation Doping (Adv. Mater. 10/2019)
Advanced Materials
Mechanics of Materials
Materials Science
Nanotechnology
Mechanical Engineering
Nanoscience
Nanosheet Thickness-Modulated MoS2dielectric Property Evidenced by Field-Effect Transistor Performance
Nanoscale
Materials Science
Nanotechnology
Nanoscience
Charge Ordered Structure and Its Impurity Doping Effect in Spinel AlV2O4
Nihon Kessho Gakkaishi
Corrections to "Performance Simulation of Nanoscale Silicon Rod Field-Effect Transistor Logic"
IEEE Transactions on Nanotechnology
Electronic Engineering
Nanotechnology
Computer Science Applications
Electrical
Nanoscience
Silicon Nanocrystal Field-Effect Light-Emitting Devices
IEEE Journal of Selected Topics in Quantum Electronics
Electrical
Electronic Engineering
Optics
Atomic
Molecular Physics,
Characteristics of a Carbon Nanotube Field-Effect Transistor Analyzed as a Ballistic Nanowire Field-Effect Transistor
Journal of Applied Physics
Astronomy
Physics
