Amanote Research
Register
Sign In
Impurity Sub-Band in Heavily Cu-Doped InAs Nanocrystal Quantum Dots Detected by Ultrafast Transient Absorption
doi 10.1021/acs.jpca.5b10682.s001
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Unknown
Publisher
American Chemical Society (ACS)
Related search
Magnetic Anisotropy of Singly Mn-Doped InAs/GaAs Quantum Dots
Physical Review B
Deep Level Transient Spectroscopy Characterization of InAs Self-Assembled Quantum Dots
Journal of Applied Physics
Astronomy
Physics
Interlevel Absorption of Electromagnetic Waves by Nanocrystal With Divalent Impurity
Condensed Matter Physics
Astronomy
Physics
Condensed Matter Physics
Influence of Noise-Binding Energy Interplay on DC-Kerr Effect and Electro-Absorption Coefficient of Impurity Doped Quantum Dots
Heliyon
Multidisciplinary
Surface Versus Impurity-Doping Contributions in InAs Nanocrystal Field Effect Transistor Performance
A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Impurity Effects in Quantum Dots: Toward Quantitative Modeling
Physical Review B
Emission Enhancement of Cu-Doped InP Quantum Dots Through Double Shelling Scheme
Materials
Materials Science
Condensed Matter Physics
Compensation Effect and Differential Capacitance Analysis of Electronic Energy Band Structure in Relaxed InAs Quantum Dots
Journal of Applied Physics
Astronomy
Physics
