Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

Acta Physica Polonica A - Poland
doi 10.12693/aphyspola.107.408
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Physics, Polish Academy of Sciences

Related search

Monte Carlo Calculation of Electron Diffusion Coefficient in Wurtzite Indium Nitride

Applied Physics Letters
AstronomyPhysics
2012English

Applying Diffusion-Based Markov Chain Monte Carlo

PLoS ONE
Multidisciplinary
2017English

Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors

Applied Physics Letters
AstronomyPhysics
2002English

Monte-Carlo Simulation of Helicopter Noise

Acta Polytechnica Hungarica
EngineeringMultidisciplinary
2015English

Illuminance Calculation Using Monte Carlo Method.

Journal of Light and Visual Environment
Electronic EngineeringElectrical
2000English

Nature of Low-Frequency Noise in Homogeneous Semiconductors

Scientific Reports
Multidisciplinary
2015English

A Monte Carlo Study of Turbulent Diffusion

English

Communication: Monte Carlo Calculation of the Exchange Energy

Journal of Chemical Physics
MedicineTheoretical ChemistryAstronomyPhysicsPhysical
2012English

Integrals, Jump-Diffusion Processes and Monte Carlo Simulation

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy